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PD - 9.1693
PRELIMINARY
l l l l l
IRL3402S
HEXFET(R) Power MOSFET
D
Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching
VDSS = 20V
G S
RDS(on) = 0.01 ID = 85A
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
D 2 P ak
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
85 54 340 110 0.91 10 14 290 51 11 5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
--- ---
Max.
1.1 40
Units
C/W 10/31/97
IRL3402S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 65 --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.010 VGS = 4.5V, ID = 51A 0.008 VGS = 7.0V, ID = 51A --- V VDS = VGS, I D = 250A --- S VDS = 10V, ID = 51A 25 VDS = 20V, VGS = 0V A 250 VDS = 16V, VGS = 0V, T J = 150C 100 VGS = 10V nA -100 VGS = -10V 78 ID = 51A 18 nC VDS = 10V 30 VGS = 4.5V, See Fig. 6 --- VDD = 10V --- ID = 51A ns --- RG = 5.0, VGS = 4.5V --- RD = 0.19, Between lead, nH --- 7.5 --- and center of die contact --- 3300 --- VGS = 0V --- 1400 --- pF VDS = 15V --- 510 --- = 1.0MHz, See Fig. 5 Typ. --- 0.02 --- --- --- --- --- --- --- --- --- --- --- 10 140 80 120
Source-Drain Ratings and Characteristics
IS
I SM
V SD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 85 --- --- showing the A G integral reverse --- --- 340 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 51A, VGS = 0V --- 72 110 ns TJ = 25C, IF = 51A --- 160 240 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 0.55 mH RG = 25, IAS =51A. ISD 51A, di/dt 82A/s, VDD V(BR)DSS, TJ 150C
Pulse width 300s; duty cycle 2%. Uses IRL3402 data and test conditions Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
IRL3402S
1000
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
1000
I D, Drain-to-Source Current (A)
100
I D, Drain-to-Source Current (A)
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
100
2.25V 20s PULSE WIDTH TJ = 25 C
1 10 100
2.25V 20s PULSE WIDTH TJ = 150 C
1 10 100
10 0.1
10 0.1
V DS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I D = 85A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 C
1.5
100
TJ = 150 C
1.0
0.5
10 2 3 4
1 V DS = 50V 20s PULSE WIDTH 5 6
0.0 -60 -40 -20
4.5V VGS = 10V
0 20 40 60 80 100 120 140 160
V GS, Gate-to-Source Voltage (V)
T J, Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL3402S
6000
4000
VGS, Gate-to-Source Voltage (V)
5000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 85 A VDS = 16V
C, Capacitance (pF)
10
Ciss
3000
2000
C oss
5
1000
Crss
0 1 10 100
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120
VDS , Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
TJ = 150 C TJ = 25 C I D , Drain Current (A)
100 1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
10
100
100us 1ms
1
10
10ms
0.1 0.2
VGS = 0 V
0.6 1.0 1.4 1.8 2.2
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL3402S
100 600
LIMITED BY PACKAGE
80
EAS , Single Pulse Avalanche Energy (mJ)
TOP
500
BOTTOM
ID 23A 32A 51A
I D , Drain Current (A)
400
60
300
40
200
20
100
0 25 50 75 100 125 150
0 25 50 75 100 125 150
T C , Case Temperature
( C)
Starting T J, Junction Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
10
(Z thJC ) Thermal Response
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3402S
() ()
0.020 0.012
R DS (on), Drain-to-Source On Resistance
R DS (on), Drain-to-Source On Resistance
0.011
0.015
VGS = 4.5V
0.010
0.009
ID = 85A
0.010
0.008
VGS = 7.0V
0.007
0.005 0 50 100 150 200 250 300 350
0.006 2 3 4 5 6 7 8
I D , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3402S
D2Pak Package Outline
10.54 (.415) 10.29 (.405) 1.40 (.055) MAX. -A2 4.69 ( .185) 4.20 ( .165) -B1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 ( .208) 4.78 ( .188) 1.40 ( .055) 1.14 ( .045) 5.08 ( .200) 1.39 ( .055) 1.14 ( .045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF . 10.16 (.400) RE F.
1.78 (.070) 1.27 (.050)
1
3
3X
0.93 ( .037) 3X 0.69 ( .027) 0.25 ( .010) M BAM
0.55 (.022) 0.46 (.018)
M INIMUM RECO MME NDED FO O TP RINT 11.43 (.450)
NO TE S: 1 DIM ENS IONS AF T ER SO LDER D IP . 2 DIM ENS IONING & T OLE RA NCING P ER A NSI Y 14.5M, 1982. 3 CO NT ROLLING DIME NSIO N : INCH. 4 HE AT SINK & LEA D DIME NSIO NS DO N OT INCLUDE BURRS .
LEA D A SSIG NME NTS 1 - G ATE 2 - DRAIN 3 - SO URCE
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
Part Marking Information
D2Pak
IN TER NATION AL REC TIFIER L OGO AS SEMBLY LOT CODE
A
PART NU MBER F53 0S 9246 9B 1M
DATE CODE (YYW W ) YY = YEAR W W = W EE K
IRL3402S
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 3) 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 0 .3 68 (.0 14 5 ) 0 .3 42 (.0 13 5 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
11 .6 0 (. 45 7 ) 11 .4 0 (. 44 9 )
15 .4 2 (.60 9 ) 15 .2 2 (.60 1 )
2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
FE E D D IR E C TIO N
1 3.5 0 (. 532 ) 1 2.8 0 (. 504 )
2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 4
33 0.0 0 (14. 17 3) M AX .
6 0.0 0 (2 .36 2) M IN .
N O T ES : 1. C O M F O R M S T O EIA -418 . 2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER . 3. D IM E N S IO N M EA S U R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.
26 .40 (1. 03 9) 24 .40 (.9 61 ) 3
3 0.4 0 (1 .19 7) MA X . 4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 10/97

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